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深圳市泰德蘭電子有限公司
TheME35N06PistheN-Channellogicenhancementmodepowerfieldeffecttransistors,usinghighcelldensity,DMOStrenchtechnology
The ME35N06P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits,and low in-line power loss that are needed in a very small outline surface mount package.
應用:
●筆記本中的電源管理
●DC/DC轉換器
●負荷開關
●液晶顯示逆變器
● RDS(ON)≦32mΩ@VGS=10V
● RDS(ON)≦40mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
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