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深圳市泰德蘭電子有限公司
TheME7900EDisthedualN-Channellogicenhancementmodepowerfieldeffecttransistorsareproducedusinghighcelldensity,DMOStrenchtechnology
The ME7900ED is the dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where gigh-side switching,and low in-line power loss are needed in a veryh small outline surface mount package.
應用:
●筆記本中的電源管理
●電池供電系統
●DC/DC轉換器低壓側開關
●負荷開關
● RDS(ON)≦22m?@VGS=4.5V
● RDS(ON)≦23mΩ@VGS=4V
● RDS(ON)≦25m?@VGS=3.1V
● RDS(ON)≦30mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
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